Semiconductors - Discrete

OptiMOS MOSFET N-Channel 60V/60A,38W RDS(on) 4.6mΩ Typ.

HEXFET Power MOSFET N-Channel 250V/93A,520W RDS(on) 14.5mΩ Typ.

Power MOSFET N-Channel 40V/195A, 230W RDS(on) 1.5mΩ Typ.

HEXFET Power MOSFET, N-Channel, 40V/120A, 143W RDS(on) 2.5mΩ Max.

HEXFET Power MOSFET N-Channel 60V/195A, 380W RDS(on) 2.8mΩ Max.

Power MOSFET (OptiMOS-P2 Power Transistor), P-Channel, 40V/180A, Power Dissipation 150W, RDS(on) 2.4mΩ Max.

Small Signal MOSFET N-Channel 60V/115mA,225mW RDS(on) 7.5Ω Max

MOSFET N-Channel 30V/1.7A,500mW RDS(on) 0.105Ω Typ,

MOSFET P-Channel 8V/3.7A, 0.96W RDS(on) 52mΩ Typ,

Dual N-Channel PowerTrench MOSFET VDSS 100V, IDS 4.5A,Rds(ON) 0.54 Ω Typ., Vgs(TH) 2V to 4V

Small Signal MOSFET N-Channel 60V/260mA, 300mW, RDS(on) 2.5Ω Max.

MOSFET N-Channel 60V/310mA, 300mW, RDS(on) 1.6Ω Max.

Enhancement Mode MOSFET N-Channel 60V/110A,176W RDS(on) 6.5mΩ Typ.

Complementary MOSFET P-Channel 30V/2.5A and N-Channel 30V/3.8A,0.85W RDS(on) Nch:34mΩ,Pch:70mΩ Typ.

STripFET II Power MOSFET N-Channel 60V/4A RDS(on) 0.07Ω Typ.

Lateral MOSFETS N-Channel, 8A, 200V, 125W Forward Transfer Admittance 2S(Max.)@3A, Vds 10V, for High Quality Audio Amplifier Applications