MOSFET N-Channel 60V/280mA, Maximum Power Dissipation 350mW RDS(on) 5Ω Max.

MOSFET ชนิด N-Channel 150V/1A กำลังสูญเสียสูงสุด 960mW ค่า RDS(on) สูงสุด 1.2Ω

MOSFET N-Channel 60V/280mA, Maximum Power Dissipation 350mW, RDS(on) 2Ω Max.

Dual N-Channel Power MOSFET 40V/36A, Maximum Power Dissipation 24W, RDS(on) 9.6mΩ Max, AEC-Q101 Qualified

N-Channel Power MOSFET 40V/50A, Maximum Power Dissipation 30W, RDS(on) 5.7mΩ Max.

N-Channel Power MOSFET 100V/280A, Maximum Power Dissipation 425W, RDS(on) 2mΩ Max.

MOSFET N-Channel 60V/300mA, Maximum Power Dissipation 350mW, RDS(on) 3Ω Max, ESD Protected Gate

MOSFET N-Channel 100V/170mA, Maximum Power Dissipation 360mW RDS(on) 6Ω Max.

MOSFET N-Channel 30V/1.9A, Maximum Power Dissipation 350mW RDS(on) 55mΩ Max.

MOSFET P-Channel 60V/1.25A, Maximum Power Dissipation 500mW, RDS(on) 170mΩ Max.

MOSFET P-Channel 60V/1.25A, Maximum Power Dissipation 500mW RDS(on) 170mΩ Max, AEC-Q101 Qualified

Silicon Carbide MOSFET N-Channel 650V/150A, 550W, RDS(on) 20mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate

Silicon Carbide MOSFET N-Channel 650V/105A, 357W, RDS(on) 30mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate

Silicon Carbide MOSFET N-Channel 1200V/120A, 580W, RDS(on) 22.3mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate

Silicon Carbide MOSFET N-Channel 1200V/100A, 517W, RDS(on) 27.4mΩ Max

Silicon Carbide MOSFET N-Channel 1200V/68A, 278W, RDS(on) 53mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate