Silicon Carbide MOSFET N-Channel 650V/36A, 175W, RDS(on) 80mΩ Max

Silicon Carbide MOSFET N-Channel 1200V/100A, 517W, RDS(on) 27.4mΩ Max

Silicon Carbide MOSFET N-Channel 1700V/67A, 357W, RDS(on) 49mΩ Max

Silicon Carbide MOSFET N-Channel 1700V/70A, 455W, RDS(on) 60mΩ Max

MOSFET N-Channel 60V/3A, AEC-Q101 Qualified, Maximum Power Dissipation 1.25W, RDS(on) 80mΩ Max

ESD Protections Diodes 200W,Bidirectional Breakdown Voltage 15.9V(Typ) Reverse Stand-Off Voltage 12V

Double ESD Protections Diodes 160W Breakdown Voltage 18V(Typ),Uni-directional Common Anode,Reverse Stand-Off Voltage 15V

TVS Diode 600W,Breakdown Voltage 200V(Nominal) Unidirectional,Working Reverse Voltage 171V

TVS Diodes1500W,Breakdown Voltage 6.8V(Nominal) Bidirectional,Working Reverse Voltage 5.8V

TVS Diode 600W,Breakdown Voltage 37V(Nominal) Bidirectional

Dual Transil Array for ESD Protection 300W Peak Pulse Power (8/20us) Low Leakage Current : IR max.

TVS Diode 1500W,Breakdown Voltage 100V(Nominal) Bidirectional,Working Reverse Voltage 85.5V

ESD Protection Very Low Capacitance, 6V

Quad Transil Array for ESD Protection 400W Peak Pulse Power (8/20us),VBR 6.1V, 4 Unidirectional ESD protection

TVS Diode ( Low Capacitance Diode Array ), Protection of 4 Lines,Working Reverse Voltage 5V

Automotive 600W TVS in SMA, Breakdown Voltage 36V(Typ.), Unidirectional, Stand-Off Voltage 30.8V (Complies with ISO 7637-2/ISO 70605)