Semiconductors - Discrete

Lateral MOSFETS P-Channel, 8A, 200V, 125W Forward Transfer Admittance 2S(Max.)@3A, Vds 10V, for High Quality Audio Amplifier Applications

Power MOSFET (OptiMOS3 Power-Transistor), N-Channel, 100V/90A, Power Dissipation 114W, RDS(on) 7mΩ Max

Power MOSFET (OptiMOS6 Power-Transistor), N-Channel, 40V/100A, Power Dissipation 62W, RDS(on) 2.56mΩ Max at Vgs 10V, for Automotive

MOSFET P-Channel, 30V/4A, Power Dissipation 1.4W, Advanced Trench Technology, RDS(on) 85mΩ Max.

MOSFET P-Channel, 30V/4.3A, Power Dissipation 1.4W Advanced Trench Technology, RDS(on) 78mΩ Max.

MOSFET N-Channel, 30V/4A, Power Dissipation 1.4W, Advanced Trench Technology, RDS(on) 85mΩ Max

MOSFET P-Channel, 30V/4A, Power Dissipation 1.4W, Advanced Trench Technology, RDS(on) 85mΩ Max.

MOSFET N-Channel 40V/50A, Maximum Power Dissipation 50W, RDS(on) 7mΩ Max

MOSFET P-Channel 30V/6A, 1W RDS(on) 36.0mΩ Typ, U-MOSVI

TrenchFET Power MOSFET P-Channel, 20V/3.1A, 1.6W, RDS(on) 112mΩ Max.

Low Voltage MOSFET P-Channel 20V/2.3A, Power Dissipation 1W, RDS(on) 120mΩ Max

MOSFET N-Channel, 30V/60A, Power Dissipation 62.5W Advanced Trench Technology, RDS(on) 5.5mΩ Max at Vgs 10V

MOSFET N-Channel 100V/160A, Maximum Power Dissipation 200W, RDS(on) 4.2mΩ Max

Power MOSFET N-Channel 60V/20A, Maximum Power Dissipation 45W, RDS(on) 35mΩ Max

MOSFET N-Channel 60V/280mA, Maximum Power Dissipation 350mW RDS(on) 5Ω Max.

MOSFET N-Channel 150V/1000mA, Maximum Power Dissipation 960mW RDS(on) 1.2Ω Max.